any changing of specification will not be informed individual mmbt 5551 npn silicon general purpose transistor collector base emitter k j c h l a b s g v 3 1 2 d top view p o w e r d i s s i p a t i o n p c m : 0 . 3 w ( t a m b = 2 5 c ) c o l l e c t o r c u r r e n t i c m : 0 . 6 a c o l l e c t o r - b a s e v o l t a g e v ( b r ) c b o : 1 8 0 v o p e r a t i n g a n d s t o r a g e j u n c t i o n t e m p e r a t u r e r t j , t s t g : - 5 5 t o + 1 5 0 e l e c t r i c a l c h a r a c t e r i s t i c s ( t a m b = 2 5 u n l e s s o t h e r w i s e s p e c i f i e d ) o c o dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e f e a t u r e s a n g e p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n m a x u n i t c o l l ec t o r - b as e b r eakdow n vo l t ag e v ( b r) cb o i c = 100 a, i e =0 180 v c o l l e c t o r - e m i t t er br ea kdow n vo l t age v ( b r) ce o ic = 0 .1 m a , i b =0 160 v e m i t t e r - b ase br eak dow n vo l t age v ( br ) ebo i e = 100 a, i c =0 6 v c o lle c to r c u t-o ff c u rre n t i cb o v cb =180v , i e = 0 0. 1 a e m i t t e r cut - of f cur r ent i ebo v eb = 4 v , i c =0 0. 1 a h fe (1 ) v ce = 5 v , i c = 1 m a 80 h fe (2 ) v ce = 5 v , i c =1 0 m a 80 250 d c cur r ent ga i n h fe (3 ) v ce = 5 v , i c = 50m a 3 0 c o l l ec t o r - e m i t t er sat ur a t i o n vo l t a g e v ce (s a t ) i c =50 m a , i b = 5 m a 0. 5 v b ase- e m i t t e r sat u r at i o n vo l t ag e v be (s a t ) i c = 5 0 m a , i b = 5 m a 1 v t r ans i t i on f r e quency f t v ce =10v , i c = 10 m a , f= 100m h z 80 m h z d e v i c e m a r k i n g m m b t 5 5 5 1 = g 1 01 -jun-2004 rev. b page 1 of 3 c o rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual MMBT5551 npn silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente typical characteristics collector-emitter breakdown voltage with resistance between emitter-base 0.1 1 10 100 1000 160 180 200 220 240 260 resistance (k ) bv - breakdown voltage (v) ? cer i = 1.0 ma c collector-cutoff current vs. ambie nt temperature 25 50 75 100 125 1 10 50 t - ambie nt temp erature ( c) i - colle ctor current (na) a cbo v = 10 0v cb typi cal pulse d current ga in vs collec tor current 0 .1 0 .2 0 .5 1 2 5 10 20 50 1 00 0 50 100 150 200 250 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c v = 5v ce collector-emitt er saturation voltage vs collect or curre nt 11 01 0 0 2 0 0 0 0. 1 0. 2 0. 3 0. 4 0. 5 i - collector current (ma) v - collector emitter voltage (v) c cesat 25 c - 40 c 125 c = 10 base-emitter saturation voltage vs collect or curre nt 11 01 0 0 2 0 0 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter voltage (v) c besat = 10 25 c - 40 c 125 c bas e e mitter o n voltage vs collector current 0. 1 1 1 0 10 0 20 0 0 0. 2 0. 4 0. 6 0. 8 1 i - collector current (ma) v - base emitter on voltage (v) c beon v = 5v ce 25 c - 40 c 125 c 01 -jun-2004 rev. b page 2 of 3
any changing of specification will not be informed individual MMBT5551 npn silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente 3 typical characteristics (continued) power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 temperature ( c) p - power dissipation (mw) d o to-92 sot-23 input and output capacitance vs reverse voltage 0.1 1 10 100 0 5 10 15 20 25 30 v - collector voltage (v) capacitance (pf) c f = 1.0 mhz ce c cb ib small signal current gain vs collector current 11 05 0 0 4 8 12 16 i - collector current (ma) h - small signal current gain c fe freg = 20 mhz v = 10v ce 01 -jun-200 4 rev. b page 3 of 3
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